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FBR1500 - FBR1510
PRV : 50 - 1000 Volts Io : 15 Amperes
FEATURES :
* * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency Ideal for printed circuit board
FAST RECOVERY BRIDGE RECTIFIERS BR50
0.728(18.50) 0.688(17.40)
0.570(14.50) 0.530(13.40)
0.685(16.70) 1.130(28.70) 0.618(15.70) 1.120(28.40)
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation * Epoxy : UL94V-O rate flame retardant * Terminals : plated .25" (6.35 mm). Faston * Polarity : Polarity symbols marked on case * Mounting position : Bolt down on heat-sink with silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency. * Weight : 17.1 grams
Rating at 25 C ambient temperature unless otherw ise specified. Single phase, half w ave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
0.658(16.70) 0.618(15.70) 0.032(0.81) 0.028(0.71)
0.210(5.30) 0.200(5.10) 0.252(6.40) 0.248(6.30) 0.100(2.50) 0.090(2.30) 0.905(23.0) 0.826(21.0)
0.310(7.87) 0.280(7.11)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current Tc = 55 C Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Current Squared Time at t < 8.3 ms. Maximum Forward Voltage drop per Diode at IF = 7.5 Amps. Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 C Ta = 100 C
SYMBOL
VRRM VRMS VDC IF(AV) IFSM I2t VF IR IR(H) Trr RJC TJ TSTG
FBR FBR FBR FBR FBR FBR FBR UNIT 1500 1501 1502 1504 1506 1508 1510
50 35 50 100 70 100 200 140 200 400 280 400 15 300 375 1.3 10 200 150 1.9 - 50 to + 150 - 50 to + 150 250 500 600 420 600 800 560 800 1000 Volts 700 Volts Amps. Amps. A2S Volts A A ns C/W C C 1000 Volts
Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance per diode (Note 2) Operating Junction Temperature Range Storage Temperature Range
Notes :
1 ) Measured w ith IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp. 2 ) Thermal Resistance from junction to case w ith units mounted on a 3.2" x 3.2" x 0.12" THK (8.2cm.x 8.2cm.x 0.3cm.) Al. Plate. heatsink.
UPDATE : APRIL 21, 1998
RATING AND CHARACTERISTIC CURVES ( FBR1500 - FBR1510 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50 10 + 0.5 A D.U.T. 50 Vdc (approx) 1 PULSE GENERATOR ( NOTE 2 ) OSCILLOSCOPE ( NOTE 1 ) 0 - 0.25 Trr
+
- 1.0 A
SET TIME BASE FOR 50/100 ns/cm
NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF. 2. Rise time = 10 ns max., Source Impedance = 50 ohms. 3. All Resistors = Non-inductive Types.
1 cm
FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES
15 300
FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES
Tc = 55 C 240
12
9
180
6
120
3 60Hz RESISTIVE OR INDUCTIVE LOAD 0 0 25 50 75 100 125 150 175
60
0
1
2
4
6
10
20
40
60
100
CASE TEMPERATURE, ( C) FIG.4 - TYPICAL FORWARD CHARACTERISTICS PER DIODE
100
NUMBER OF CYCLES AT 60Hz
FIG.5 - TYPICAL REVERSE CHARACTERISTICS REVERSE CURRENT, MICROAMPERES PER DIODE
10 TJ = 100 C
FORWARD CURRENT, AMPERES
Pulse Width = 300 s 2% Duty Cycle TJ = 25 C 10
1.0
1.0
0.1 TJ = 25 C
0.1
0.01 0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE VOLTAGE, (%)
0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE, VOLTS

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